Search Result "TCAD"
Source/Drain Stressor Design for Advanced Devices at 7 nm Technology Node
Journal: Nanoscience & Nanotechnology-Asia
Volume: 10 Issue: 4 Year: 2020 Page: 447-456
Author(s): T.P. Dash,S. Dey,S. Das,J. Jena,E. Mahapatra,C.K. Maiti
An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET
Journal: Nanoscience & Nanotechnology-Asia
Volume: 9 Issue: 2 Year: 2019 Page: 291-297
Author(s): Hind Jaafar,Abdellah Aouaj,Ahmed Bouziane,Benjamin Iñiguez
Effect of Field Plate on Device Performance of Wide Bandgap HEMT
Journal: Recent Advances in Electrical & Electronic Engineering
Volume: 16 Issue: 4 Year: 2023 Page: 460-470
Author(s):
Determination of Enriched Quantum Efficiency with InGaN/GaN Multiple Quantum Well Solar Cells
Journal: Micro and Nanosystems
Volume: 13 Issue: 4 Year: 2021 Page: 418-425
Author(s): Shingmila Hungyo,Khomdram J. Singh,Dickson Warepam,Rudra S. Dhar
Elimination of the Impact of Trap Charges through Heterodielectric BOX in Nanoribbon FET
Ebook: Nanoelectronic Devices and Applications
Volume: 1 Year: 2024
Author(s): Lakshmi Nivas Teja
Doi: 10.2174/9789815238242124010014
Comparative Study of L-shaped and U-shaped TFET Device with TemperatureVariations
Journal: Nanoscience & Nanotechnology-Asia
Volume: 12 Issue: 3 Year: 2022 Page: 34-38
Author(s):
Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application
Ebook: Nanoelectronic Devices and Applications
Volume: 1 Year: 2024
Author(s): Dinesh Kumar Dash
Doi: 10.2174/9789815238242124010015
On The Parasitic Electromagnetic Signals
Ebook: Towards a Modeling Synthesis of Two or Three-Dimensional Circuits Through Substrate Coupling and Interconnections: Noises and Parasites
Volume: 1 Year: 2014
Author(s): Christian Gontrand
Doi: 10.2174/9781608058266114010006
Performance Analysis of Gate Engineered High-K Gate Oxide Stack SOIFin-FET for 5 nm Technology
Journal: Nanoscience & Nanotechnology-Asia
Volume: 13 Issue: 1 Year: 2023 Page: 2-8
Author(s):
Performance Comparison of InAs Based DG-MOSFET with Respect to SiO2 and Gate Stack Configuration
Journal: Nanoscience & Nanotechnology-Asia
Volume: 10 Issue: 4 Year: 2020 Page: 419-424
Author(s): Sanjit K. Swain,Sudhansu M. Biswal,Satish K. Das,Sarosij Adak,Biswajit Baral