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Nanoscience & Nanotechnology-Asia

Author(s): Hind Jaafar*, Abdellah Aouaj, Ahmed Bouziane and Benjamin Iñiguez

DOI: 10.2174/2210681208666180813122145

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An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

Page: [291 - 297] Pages: 7

  • * (Excluding Mailing and Handling)

Abstract

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper.

Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density.

Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages.

Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Keywords: Dual metal gate, Dual Oxide Thickness (DOT), graded channel, subthreshold current, MOSFET, Metal-Oxide- Semiconductor (MOS).

Graphical Abstract

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