Abstract
SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.
Abstract
Due to the shortening of channel length in accordance with Moore’s law,
short channel effects degrade transistor performance. This chapter explains the
emerging nanosheet fin field effect transistor (FinFET) design and operation through
technology computer-aided design (TCAD) tool-based design and simulation. A 10 nm
node Ge-channel nanosheet FinFET is designed and simulated by incorporating
quantum transport models in both DC and AC environments. Corresponding short
channel effect (SCE) parameters are obtained and compared with Si-channel nanosheet
FinFETs. Further, device feasibility for low-power and high-frequency applications is
studied.
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Authors:Bentham Science Books