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SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.
Abstract
Short channel MOSFET model was presented. The difficulty for the model exists in that depletion width changes along the channel. A universal channel depletion width parameter was proposed, which effectively expresses the channel depletion width variation for various device parameters and bias conditions. Using this parameter, a two-dimensional potential distribution was solved and a corresponding threshold voltage model was derived, which reproduces the numerical data of sub-0.1-m gate length devices. We further extend the model to non-uniform channel doping devices of epi-MOSFETs.
Keywords:
Channel doping, Charge sharing, Epi-MOSFET, Gate length, Junction depth, Punch through, Scaling theory, Short channel effects, Short channel immunity, Surface potential, Threshold voltage, Universal channel depletion width.
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Authors:Bentham Science Books