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SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.
Abstract
Non uniform channel doping profile enables us to control threshold voltage suppressing short channel effects. We showed how threshold voltage Vth is controlled for various channel doping profiles such as epi-channel, and counter doped channel. Vth is controlled by the thickness of epi-layer in epi-channel MOSFETs and it is controlled widely with centroid and dose in counter doped channel MOSFETs. The models were verified by comparing with numerical data. The feasibility of counter doped channel is also studied.
Keywords:
Arbitrary doped channel, Channel doping, Counter doped channel, Epi-channel MOSFET, Gauss’s law, Joined half Gaussian, Multiple ion implantation, Poisson equation, Retrograde channel, Short channel immunity, Subthreshold characteristics, Threshold voltage.
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Authors:Bentham Science Books