Bipolar Transistor and MOSFET Device Models

Author(s): Kunihiro Suzuki

DOI: 10.2174/9781681082615116010005

The pn Junction

Pp: 93-171 (79)

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Abstract

SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.

Abstract

pn junction is a basic component of other devices such as bipolar transistors and MOSFETs. Therefore, the analysis in this chapter is indispensable for understanding the devices treated in entire of this book. The prominent feature of pn junction is that it rectifies the current flow, where it allows current flow in one direction but not in opposite direction. We study the potential distribution, current voltage characteristics, and breakdown of the pn junction.

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