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SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.
Abstract
Segregation is a coefficient defined as the ratio of impurity concentrations at both sides of two different layers, which influences the diffusion profiles. However, the ratio is rarely in thermal equilibrium in general cases. Hence, the evaluation of the value of the segregation is difficult. It is found that the thermal equilibrium of segregation has been established in the redistribution profile of impurities in oxidized polycrystalline Si (polysilicon) because the diffusion coefficient is much larger than that in Si. The redistribution model is derived, and related segregation values are evaluated.
Keywords:
Segregation, thermal equilibrium, polycrystalline silicon, diffusion, redistribution, chemical potential, interface, Si/SiO2 interface, oxidation, transport coefficient, chemical vapor deposition, B, As, SIMS, SiO2/polysilicon interface, absorption coefficient, dose.
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Authors:Bentham Science Books