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SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.
Abstract
Oxidation model is derived by considering diffusion fluxes in gas phase atmosphere, growing oxide layer, and reaction of oxidant and substrate Si atoms at SiO2/Si interface. This model gives simple time dependence of growing SiO2 layer thickness. The impurities in the Si substrate redistribute during the oxidation. We treat the redistributed profile as moving boundary one, and derive the corresponding model. The model well predicts B depletion at the SiO2/Si interface.
Keywords:
Oxidation, segregation, SiO2, VLSI, MOS, chemical reaction, redistribution, surface, mass-transfer constant, Henry’s law, ideal gas law, SiO2/Si interface, linear dependence, parabolic dependence, Massoud model.
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Authors:Bentham Science Books