Abstract
SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.
Abstract
We derive a diffusion flux and diffusion equation step by step, starting with a rough sketch one to a practical one. The flux is described with the paring with point defects, and the dependence of diffusion coefficients on doping concentration is emerged. We can predict diffusion profiles by solving the equation.
Keywords:
Ion implantation, diffusion, diffusion flux, diffusion equation, diffusion coefficient, point defects, doping concentration, lattice sites, jumping frequency, electric field, mobility, Einstein’s relationship, interstitial Si, intrinsic carrier concentration, statistic mechanism.
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Authors:Bentham Science Books