Abstract
SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.
Abstract
An analytical model with lateral straggling parameters was developed to describe the tilt dependence of ion-implantation profiles. There are three parameters associated with depth-dependent lateral straggling into the model. On the basis of comparison between experimental and analytical data, a database of ion-implantation profiles that includes lateral-straggling parameters have established. The data with tilt 0° were evaluated using off angle substrates.
Keywords:
Ion implantation, lateral straggling, effective gate length, short channel effects, MOSFETs, lateral penetration, lateral resolution, SIMS, tilt, tail function, Pearson function, Gaussian function, joined half Gauss, error function, amorphous layer, channeling.
Recommended Chapters
We recommend
Authors:Bentham Science Books