Abstract
SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.
Abstract
Various impurities are used in VLSI processes. The key factors for the selection of the impurities are their solid solubility and diffusion coefficient. B, As, P are commonly used as doping impurities due to their high solid solubility. In and Sb are sometimes used to realize shallow junctions due to their low diffusion coefficients. We briefly showwhere various impurities are used in two distinguished devices of bipolar transistors and MOS FET’s.
Keywords:
Solid solubility, diffusioncoefficient, boron, arsenic, phosphorous, antimony, indium, bipolar, MOS, emitter, base, collector, source, drain, gate, extension, pocket.
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Authors:Bentham Science Books