From Semiclassical Semiconductors to Novel Spintronic Devices

Author(s): Petro G. Sydorchuk and Halyna Khlyap

DOI: 10.2174/9781608051458113010004

Narrow Gap Semiconductors Based on Mercury-Cadmium Telluride

Pp: 3-55 (53)

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From Semiclassical Semiconductors to Novel Spintronic Devices

Narrow Gap Semiconductors Based on Mercury-Cadmium Telluride

Author(s): Petro G. Sydorchuk and Halyna Khlyap

Pp: 3-55 (53)

DOI: 10.2174/9781608051458113010004

* (Excluding Mailing and Handling)

Abstract

The fundamentals of technologies applied for preparation of narrow-gap semiconductors Hg(Zn)CdTe are presented. The lecture discusses questions related to the technologies and device applications of active elements based on HgZnCdTe materials.


Keywords: Cadmium mercury telluride, quaternary solid solutions, phase diagrams, infrared detectors, current-voltage characteristic, capacitance-voltage characteristic, energy band diagram, atmospheric oxygen.

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