Introduction to Strain Metrology for Semiconductors

Two conventional strain measurement methods, namely the strain gauge and the Moire technique are first discussed. The origin of interest in strain effects in semiconductors is introduced in a chronological sequence beginning with stressed induced defects near isolation structures and the present intentional use of strain in the channel of field effect transistors as a performance booster. The need and the lack of precise strain measurement methods at the submicron and nanoscale are emphasized. Strain measurement for microelectromechanical device materials is also discussed.

Keywords: Strain metrology, Nanoelectronics, Strained silicon, Microelectromechanical systems.