Abstract

In the present research, a β-Ga2O3 high electron mobility transistor is proposed for investigating the implementation of high-k dielectric materials. The implementation of the dielectrics, Si3N4 , Al2O3 , and HfO2, at the interface of aluminum nitride (AlN) and the gate is depicted to determine the optimal selection. The novelty of the device lies in the highly doped n+ material with a broader gap between ohmic contact and the barrier layers. The performance is computed regarding the transfer and output characteristics, transconductance, gate capacitance, 2nd and 3rd-order transconductance, sub-threshold voltage, on-resistance and output conductance. The crucial parameters for switching and linearity performance are also assessed. The results demonstrate significant improvements in dynamic and access resistance, leading to a remarkably high transconductance (Gm ) value of 0.15 S/µm and a peak drain current density of 650 A/mm at Vds = 5 V. These promising results pave the way for potential applications in high-power radio frequency and microwave devices, making the proposed device a promising candidate for future advancements in these fields.