Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices

Author(s): Halyna Khlyap

DOI: 10.2174/978160805021510901010096

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Design of Active Elements Based on Nanostructural A1B5C6 Materials

Pp: 96-108 (13)

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Abstract

SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.

Abstract

Preparation and main electrophysical characteristics of A1B5C6 nanostructural semiconductor materials are discussed. Sensor devices designed for external electric field detection and operation in aggressive environments are described. Numerical simulation of the main electrical characteristics of these structures is also reported.

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