Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices

Author(s): Halyna Khlyap

DOI: 10.2174/978160805021510901010021

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Heterostructure Growth

Pp: 21-32 (12)

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Abstract

SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.

Abstract

Principal technologies used for heterostructures growth are described: molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), atomic layer deposition (ALD). The main tools for characterization of the structures obtained are presented along with recent experimental data on the most important structural and electrical properties of the heterostructures based on III-V and II-VI semiconductor materials.

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