Abstract
SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.
Abstract
Researchers are motivated to develop novel electronic switches with
improved low power properties and reduced short channel effects due to the
downscaling of conventional MOSFETs (SCE). Using multi-gate FinFET technology
could improve control of the gate over the channel charge. We have discussed
FinFETs, or multigate transistors, in this chapter. The chapter will include the
classification and detailed physics inside the device. The Fabrication section will
explain the steps involved in manufacturing the device. The difficulties with FinFET
technologies have also been discussed in order to examine the research gap. The
performance improvement engineering techniques will give exposure to further
improvement techniques in the device. The circuit applications will address the various
analog/digital circuits based on FinFET.
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Authors:Bentham Science Books