Solid State & Microelectronics Technology

Author(s): Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal * .

DOI: 10.2174/9789815079876123010005

Junction Field Effect Transistor

Pp: 122-161 (40)

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  • * (Excluding Mailing and Handling)

Abstract

SHS investigation development is considered from the geographical and historical viewpoint. 3 stages are described. Within Stage 1 the work was carried out in the Department of the Institute of Chemical Physics in Chernogolovka where the scientific discovery had been made. At Stage 2 the interest to SHS arose in different cities and towns of the former USSR. Within Stage 3 SHS entered the international scene. Now SHS processes and products are being studied in more than 50 countries.

Abstract

FET is a resistor whose resistance value is controlled by the potential applied to the control terminal termed as Gate. The conducting region is called a channel which may be either p type or n type based on the substrate used. The channel conductivity mainly depends on the gate region. I-V characteristics are expressed in a detailed manner with necessary equations. JFET parameters are another crucial factor to understand its characteristics. The small signal model of JFET is illustrated in a very lucid manner. 

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