Abstract

Tin doped antimony sulfide thin films have been grown on glass substrates at room temperature by vacuum thermal evaporation method. The doping was carried out during the growth by two source method with the aim to investigate its effects on electrical, structural and optical properties of 1, 2 and 3 wt.% Sn-doped Sb2S3 thin films. Using transmission spectra in the range of 200-1800 nm, the absorption coefficient of the deposited films in the fundamental absorption edge has been analyzed to identify the possible optical transition in these films, where the energy band gap corresponding to the optical transition is calculated. Hot point probe method has been used to study the conductivity type and photoconductivity values of the thin films in the wavelength range 380-1100 nm of the incident photons. Effects of doping on external quantum efficiency (EQE) are also investigated.

Keywords: Tin antimony sulfide, thin film, electrical and structural properties.