Abstract

Chalcogenide semiconductor thin films are reported for the first time as prospective aggressive gases sensors. Results of structural investigations and electric field-induced properties of thin (40-100nm) Bi-containing semiconductor thin films grown on glass substrates by UHV technique are reported. Microstructure and phase composition of the films are examined by transmission electron microscopy (TEM) and electron diffraction methods. Room-temperature currentvoltage dependencies are also studied and possible mechanisms of charge carriers transport are discussed. Recent patents on thin film-based gas sensors production are also discussed in this paper.

Keywords: Chalcogenide Bi-containing semiconductors, thin film, nanocrystal, AFM, current mechanisms, nitrogen monoxide, hydrogen