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Current Materials Science

Author(s): Swagata Bhattacherjee, Palasri Dhar and Sunipa Roy*

DOI: 10.2174/0126661454274311231011070702

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Impacts of Cavity Thickness and Insulating Material on Dielectric Modulated Trench Junction-less Double Gate Field Effect Transistor for Biosensing Applications

Page: [513 - 521] Pages: 9

  • * (Excluding Mailing and Handling)

Abstract

Introduction: This work represents the influence of gate dielectric, and the nano-cavity gap of a dielectric modulated trench gate Junction-less Double Gate Field Effect Transistor (JL-DGFET) on the different performance indicators is investigated considering the Low-Frequency Noise.

Methods: It is noted that the gate dielectric and the nanogap, both parameters, have a substantial influence on the sensing capacity and performance of noise of the device.

Results: A double gate suitable dielectric material and cavity thickness can effectively improve the biosensor’s sensitivity with a minimum amount of noise.

Conclusion: The sensitivity is found to increase up to 9.5 for dielectric constant, k = 3.57 and 6.5 for dielectric constant, k = 2.1.

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