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Nanoscience & Nanotechnology-Asia

Author(s): Sweta Chander, Sanjeet Kumar Sinha* and Rekha Chaudhary

DOI: 10.2174/2210681213666230516162511

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Prospects and Challenges of Different Geometries of TFET Devices for IoT Applications

Article ID: e160523216987 Pages: 10

  • * (Excluding Mailing and Handling)

Abstract

Background: The applications bas ed on IoT are nearly boundless, and the integration of the cyber world and the physical world can be done effortlessly. TFET Based IoT applications may be the future alternative to existing MOSFET-based IoT because of the faster switching speed of TFET devices.

Objectives: Prospects and challenges in a simulation study of different Geometries of TFET devices for IoT Applications.

Methods: In this manuscript, the detailed study of IoT evolution, IoT applications and challenges faced by IoT industries based on different TFET geometries have been elaborated and analyzed.

Results: The Internet of Things (IoT) is a new prototype that provides a set of new services for newgeneration technological innovations. IoT has seized the entire technological world as it can be used in every application like health, security, environmental and biomedical applications etc. The semiconductor TFET devices operating at low supply voltage and consuming the least power are most suitable for IoT applications. The devices like digital inverter, memory, adiabatic circuit, and different shaped TFET are explained as well as compared in tabular form thoroughly.

Conclusion: In next-generation devices, TFET can be widely used for low-power IoT applications because of the superior switching characteristics performance.

Graphical Abstract

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