Abstract

Introduction: The current-voltage (I-V) characteristics of the Al/p-type Si Metal- Semiconductor (MS) and Al/GO/p-type Si Metal-Oxide-Semiconductor (MOS) structure were investigated at room temperature (300 K).

Methods: The main electrical characteristics such as ideality factor (n), zero-bias barrier height (Φ_bo), and Series Resistance (R_S) of Al/p-Si and Al/GO/p-type Si semiconductor structures were obtained from different methods using I-V measurements.

Results: Experimental results show that the electrical properties obtained from Al/GO/p-type Si structure are I-V measurements generally slightly greater than those obtained from Al/p-type Si structure.

Conclusion: However, the interface state densities resistance values obtained from the Al/GO/p-Si structure are generally slightly smaller than those obtained from Al/p-type Si structure. The interface states (N_SS) as energy distribution functions (E_SS-E_V) were obtained by using I-V measurements for both Al/p-type Si and Al/GO/p-type Si structures.

Keywords: Al/p-Si, electrical properties, graphene oxide, interface states, I-V, insulator.