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Current Chinese Science

Author(s): Yaşar Aslan, Halil Seymen, Niyazi Berk and Şükrü Karataş*

DOI: 10.2174/2210298102666220607150102

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The Electrical Characteristics and the Interface State Densities of Al/p-Si Structures with and Without the GO Insulator Layer

Page: [472 - 478] Pages: 7

  • * (Excluding Mailing and Handling)

Abstract

Introduction: The current-voltage (I-V) characteristics of the Al/p-type Si Metal- Semiconductor (MS) and Al/GO/p-type Si Metal-Oxide-Semiconductor (MOS) structure were investigated at room temperature (300 K).

Methods: The main electrical characteristics such as ideality factor (n), zero-bias barrier height (Φbo), and Series Resistance (RS) of Al/p-Si and Al/GO/p-type Si semiconductor structures were obtained from different methods using I-V measurements.

Results: Experimental results show that the electrical properties obtained from Al/GO/p-type Si structure are I-V measurements generally slightly greater than those obtained from Al/p-type Si structure.

Conclusion: However, the interface state densities resistance values obtained from the Al/GO/p-Si structure are generally slightly smaller than those obtained from Al/p-type Si structure. The interface states (NSS) as energy distribution functions (ESS-EV) were obtained by using I-V measurements for both Al/p-type Si and Al/GO/p-type Si structures.

Keywords: Electrical properties, Graphene oxide, Interface states, I-V., Al/p-Si

Graphical Abstract

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