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Micro and Nanosystems

Author(s): Sweta Chander and Sanjeet Kumar Sinha*

DOI: 10.2174/1876402914666220511143102

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Performance Analysis of SOI-Tunnel FET with AlxGa1-xAs Channel Material

Page: [185 - 188] Pages: 4

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Abstract

Background: Tunnel Field-effect transistor (TFETs) has appeared as a promising candidate due to its steep slope (SS<60 mV/dec), which can be used for low-power applications.

Objectives: Authors investigated AlxGa1-xAs as the channel material in Silicon-on-Insulator (SOI) TFETs and compared it to other existing channel materials, SiGe, Ge, Si, Ge, Strained Si, and GaAs.

Methods: For the entire device study, the mole fraction x = 0.2 has been used in AlxGa1-xAs channel material. The direct energy bandgap for Al0.2Ga0.8As has been used because the mole fraction is less than 0.4. The Al0.2Ga0.8As-based device has been analyzed in terms of Direct Current (DC) and Alternating Current (AC) characteristics using the Synopsys TCAD tool.

Results: The proposed device offers enhanced switching speed with a high on/off ratio of ~1012 and a steep subthreshold swing of 30 mv/dec As a channel material, Al0.2Ga0.8As also enhances the miller capacitance of the device, which is one of the essential requirements of the device performance.

Conclusion: In next-generation devices, Al0.2Ga0.8As as channel material and TFET device based on this channel material act as a promising contender for low-power applications.

Keywords: Tunnel field effect transistor, silicon-on-insulator, subthreshold swing, miller capacitance, threshold voltage, Ion/Ioff current.

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