Abstract

Introduction: Silver nanoparticle (AgNP)-based chemical etching is applied to produce silicon nanowires (SiNWs) on monocrystalline silicon.

Methods: The effect of etching time on the production of silicon nanowires and on optical and optoelectronic properties was studied.

Results: Using this approach, surface recombination velocity (S_eff) and the effective lifetime (τ_eff) evolution of SiNWs after passivation were improved, and SiNWs obtained in the optimal time of 20 min, exhibited shallow reflection of 1% in the wavelength range of 300–1100 nm.

Conclusion: Thus, passivated solar cell-based SiNWs in an HF/HNO₃/H₂O solution were essential for increasing the efficiency of solar cell-based SiNWs from 9% to nearly 15%.

Keywords: Monocrystalline silicon, nanowires, etching, recombination velocity, silicon solar cell, nanoscale mask.